David Cherns

Research

My interests lie in the application of novel electron microscopy techniques to the analysis of defects and interfaces, particularly in semiconductors, to clarify microstructure/property relationships. My recent research has examined the structure and electronic properties of threading defects found in GaN devices, such as dislocations, nanopipes and inversion domains, and the role of nanostructures in reducing defect densities and strain. I have interests in the growth of other wide band gap semiconductors for solar cells and display applications.

Recent selected publications:

D. Cherns, L. Meshi, I. Griffiths, S. Khongphetsak, S.V. Novikov, N.R.S. Farley, R.P. Campion and C.T. Foxon, "Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy", Appl. Phys. Lett. 93, 111911-3 (2008)
D. Cherns and Y. Sun "Defect reduction by epitaxial lateral overgrowth of nanorods in ZnO/(0001)sapphire films", Appl. Phys. Lett. 92, 051909-11 (2008)
D. Cherns and M.E. Hawkridge, "Open core dislocations in GaN grown by hydride vapour phase epitaxy", Phil. Mag. 86 (29-31): 4747-4756 (2006)
D. Cherns, S-L. Sahonta, R. Liu, F.A. Ponce, H. Amano and I. Akasaki, "The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films": Appl. Phys. Lett. 85, 4923-4925 (2004)
D. Cherns and C.G. Jiao, "Electron holography studies of the charge on dislocations in GaN", Phys. Rev. Lett. 87 (20), 5504-5507 (2001)
D. Cherns, S.J. Henley and F.A. Ponce, "Edge and screw dislocations as non-radiative centers in InGaN/GaN quantum well luminescence" Appl. Phys. Lett. 78 (2001) 2691-2693